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The CMS3D214B circuit is a high-current, highly reliable half-bridge driver circuit designed using multi-chip packaging technology. The high-side power transistor is a P-channel VDMOS, and the low-side power transistor is an N-channel VDMOS. The internal logic control and gate driver circuits for the power transistors are designed using a BCD process, realizing the half-bridge driver functionality.

The half-bridge driver circuit is controlled by two input signals that manage the conduction and switching of the high-side and low-side power transistors. The control method is PWM/EN control. The circuit incorporates a dynamic dead-time adjustment mechanism, which ensures that the low-side power transistor is only enabled after the high-side power transistor has turned off, and vice versa. The half-bridge driver circuit has a maximum operating voltage of 40V, is packaged in an SOP8 form, and supports a continuous current capability of 5A.

This series of circuits supports zero standby power consumption. The circuit is activated by a high-level pulse on the EN signal, with a start-up delay of approximately 30μs. When the EN signal stays low for more than 122ms, the circuit enters a zero standby current mode.

>   Zero standby power consumption

>   Operating supply voltage range: 5V to 40V

>   Operating temperature: -40°C to 105°C

>   Built-in dynamic dead-time protection circuit, minimum dead-time of 250ns

>   PWM/EN signal input method

>   Current output capability: 5A

>   5V input logic

>   Built-in undervoltage protection function